OSD OSW26BZ06-NV026 — Defect Metrology and Charge Trapping Dynamics in Transfer-Doped Diamond Transistors
- · 41d
- Not stated
- Not stated
- Sep 23, 2026
Official announcement on dod_dsip · opens the funder's page. Always confirm dates there.
Summary
Develop an innovative, non-destructive diamond semiconductor defect metrology technique and laboratory-scale apparatus to identify, quantify, determine location in the device, and energetically characterize charge traps that cause current collapse in surface-channel diamond transistors.
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