Two Research Fellow posts in UCL's Department of Electronic & Electrical Engineering, working on molecular beam epitaxy (MBE) growth of III-V and Group-IV semiconductor materials as part of the QUDOS Programme Grant. The role covers independent research into novel epitaxial device structures (including quantum dot laser heterostructures), day-to-day operation and maintenance of MBE growth facilities, and publishing results in peer-reviewed venues.
Candidates need a PhD in physics, materials science or a related engineering discipline, hands-on experience operating III-V and Group-IV MBE systems, and a demonstrated research record in quantum dot laser heteroepitaxial growth.
Full-time, fixed-term until 30 April 2027 with possible extension.
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